Semiconductor device and manufacturing method thereof

ABSTRACT

In a method of manufacturing a semiconductor device, a separation wall made of a dielectric material is formed between two fin structures. A dummy gate structure is formed over the separation wall and the two fin structures. An interlayer dielectric (ILD) layer is formed over the dummy gate structure. An upper portion of the ILD layer is removed, thereby exposing the dummy gate structure. The dummy gate structure is replaced with a metal gate structure. A planarization operation is performed to expose the separation wall, thereby dividing the metal gate structure into a first gate structure and a second gate structure. The first gate structure and the second gate structure are separated by the separation wall.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/036,888 filed on Jul. 16, 2018, which is a continuation of U.S.application Ser. No. 15/491,206 filed on Apr. 19, 2017, now. U.S. Pat.No. 10,026,737, which claims priority to U.S. Provisional PatentApplication 62/440,800 filed Dec. 30, 2016, the entire disclosure ofeach of which is incorporated herein by reference.

TECHNICAL FIELD

The disclosure relates to a semiconductor integrated circuit, and moreparticularly to a semiconductor device having a fin structure and itsmanufacturing process.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs, such as a finfield effect transistor (Fin FET). Fin FET devices typically includesemiconductor fins with high aspect ratios and in which channel andsource/drain regions of semiconductor transistor devices are formed. Agate is formed over and along the sides of the fin structures (e.g.,wrapping) utilizing the advantage of the increased surface area of thechannel and source/drain regions to produce faster, more reliable andbetter-controlled semiconductor transistor devices. A metal gatestructure together with a high-k gate dielectric having a high electricdielectric constant is often used in Fin FET device, and is fabricatedby a gate-replacement technology.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1A shows a perspective view of a semiconductor device according tosome embodiments of the present disclosure. FIG. 1B shows a plan view ofa semiconductor device according to some embodiments of the presentdisclosure. FIG. 1C shows a cross sectional view corresponding to lineX1-X1 of FIG. 1B, and FIG. 1D shows a cross sectional view correspondingto line X2-X2 of FIG. 1B according to some embodiments of the presentdisclosure. FIG. 1E shows a cross sectional view corresponding to lineY1-Y1 of FIG. 1B according to some embodiments of the presentdisclosure. FIG. 1F shows a cross sectional view corresponding to lineY1-Y1 of FIG. 1B according to other embodiments of the presentdisclosure.

FIG. 2A is a perspective view and FIG. 2B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 3A is a perspective view and FIG. 3B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 4A is a perspective view and FIG. 4B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 5A is a perspective view and FIG. 5B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 6A is a perspective view and FIG. 6B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 7A is a perspective view and FIG. 7B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 8A is a perspective view and FIG. 8B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 9A is a perspective view and FIG. 9B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 10A is a perspective view and FIG. 10B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 11A is a perspective view and FIG. 11B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 12A is a perspective view, FIG. 12B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B and FIG. 12C is a cross sectionalview corresponding to line Y1-Y1 of FIG. 1B, all of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 13A is a perspective view and FIG. 13B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 14A is a perspective view, FIG. 14B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B and FIG. 14C is a cross sectionalview corresponding to line Y1-Y1 of FIG. 1B, all of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 15A is a perspective view and FIG. 15B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 16A is a perspective view and FIG. 16B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 17A is a perspective view and FIG. 17B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 18A is a perspective view and FIG. 18B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 19A is a perspective view and FIG. 19B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 20A is a perspective view and FIG. 20B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B, both of which illustrate one ofvarious stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 21A is a perspective view, FIG. 21B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B and FIG. 21C is a plan view, allof which illustrate one of various stages of a sequential semiconductordevice manufacturing process according to some embodiments of thepresent disclosure.

FIG. 22A is a perspective view, FIG. 22B is a cross sectional viewcorresponding to line X1-X1 of FIG. 1B and FIG. 22C is a plan view, allof which illustrate one of various stages of a sequential semiconductordevice manufacturing process according to some embodiments of thepresent disclosure.

FIG. 23A shows a perspective view of a semiconductor device according tosome embodiments of the present disclosure. FIG. 23B shows a plan viewof a semiconductor device according to some embodiments of the presentdisclosure. FIG. 23C shows a cross sectional view corresponding to lineX11-X11 of FIG. 23B, and FIG. 23D shows a cross sectional viewcorresponding to line X12-X12 of FIG. 23B according to some embodimentsof the present disclosure.

FIG. 24A is a perspective view and FIG. 24B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 25A is a perspective view and FIG. 25B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 26A is a perspective view and FIG. 26B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 27A is a perspective view and FIG. 27B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 28A is a perspective view and FIG. 28B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 29A is a perspective view and FIG. 29B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 30A is a perspective view and FIG. 30B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 31A is a perspective view and FIG. 31B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 32A is a perspective view and FIG. 32B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 33A is a perspective view and FIG. 33B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 34A is a perspective view and FIG. 34B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 35A is a perspective view and FIG. 35B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 36A is a perspective view, FIG. 36B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B and FIG. 36C is a plan view,all of which illustrate one of various stages of a sequentialsemiconductor device manufacturing process according to some embodimentsof the present disclosure.

FIG. 37A is a perspective view and FIG. 37B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 38A is a perspective view and FIG. 38B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 39A is a perspective view, FIG. 39B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, FIG. 39C is a plan view andFIG. 39D is a side view seen along Y direction, all of which illustrateone of various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 40A is a perspective view and FIG. 40B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 41A is a perspective view and FIG. 41B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 42A is a perspective view and FIG. 42B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 43A is a perspective view and FIG. 43B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

FIG. 44A is a perspective view, FIG. 44B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B and FIG. 44C is a plan view,all of which illustrate one of various stages of a sequentialsemiconductor device manufacturing process according to some embodimentsof the present disclosure.

FIG. 45A is a perspective view and FIG. 45B is a cross sectional viewcorresponding to line X12-X12 of FIG. 23B, both of which illustrate oneof various stages of a sequential semiconductor device manufacturingprocess according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

FIGS. 1A-1E show various views of a semiconductor fin field effecttransistor (FinFET) according to some embodiments of the presentdisclosure.

In the present disclosure, two gate patterns extending and aligned alongthe X direction are physically separated by a separation wall made of adielectric material. As shown in FIGS. 1A-1E, a semiconductor deviceincludes a substrate 10, semiconductor fins 20 and gate structures 90.The bottom of the semiconductor fins 20 are embedded in an isolationinsulating layer 30, which is also called shallow trench isolation(STI). In FIGS. 1A-1E, four fins F1, F2, F3 and F4 are disposed over thesubstrate 10, but the number of the fins is not limited to four. Some ofthe gate structures 90 are physically separated by separation walls 50made of a dielectric material. The separation wall 50 is further coveredby a first cover layer 51 in some embodiments. On opposing sides of thegate structure 90, sidewall spacers 76 are disposed. The gate structures90 include a gate dielectric layer 92, a work function adjustment layer94 and a body gate electrode 96.

The fins 20 not covered by the gate structures 90 are source/drain (S/D)regions. An epitaxial layer 80 is formed on the S/D regions of the fins20 and an etch stop layer (ESL) 82 is formed over the epitaxial layer80. Further, an interlayer dielectric (ILD) layer 84 is formed to coverthe S/D structures.

In FIGS. 1A-1E, the fin structures 20 includes first F1, second F2,third F3 and fourth F4 fin structures disposed in this order, in someembodiments. The fin F2 is a dummy fin, on which the separation wall 50is formed. When a pitch P1 between the first fin F1 and second fin F2 isFP, a pitch P2 between the first fin F1 and the third fin F3 is 2FP anda pitch P3 between the third fin F3 and the fourth fin F4 is 3FP ormore, in some embodiments. The fin pitch P1 is about 14 nm to 30 nm insome embodiments.

As shown in FIGS. 1C and 1D, the distance H1 between the ESL 82 on theS/D region and the upper surface of the ILD layer 84 is in a range fromabout 14 nm to about 30 nm in some embodiments. The distance H2 betweenthe ESL 82 on the dielectric separation wall 50 and the upper surface ofthe ILD layer 84 is in a range from about 20 nm to about 50 nm in someembodiments. The distance H3 between the work function adjustment layer94 on the fin F1 and the upper surface of the body gate electrode 96 isin a range from about 14 nm to about 30 nm in some embodiments. Thedistance H4 between the top of the fin F1 and the upper surface of thebody gate electrode 96 is in a range from about 18 nm to about 40 nm insome embodiments.

In FIGS. 1A-1E, a minimum distance 51 between the dielectric separationwall 50 and the adjacent fin is substantially equal to a space betweenthe fins. The distance 51 may be multiple of the fin space. The width ofthe dielectric separation well 50 is substantially equal to or slightlysmaller than a fin width (e.g., 5-10 nm).

The width of the dielectric separation wall 50 is about 4 nm to about 8nm in some embodiments. The minimum distance S1 (see, FIGS. 1B and 1C)between the dielectric separation wall 50 and the adjacent fin (F1 orF3) is about 8 nm to about 16 nm in some embodiments. Further, the spaceS2 between the third fin F3 and the ESL 82, i.e., the end of the gatestructure, is in a range from about 8 nm to about 16 nm in someembodiments.

As shown in FIGS. 1C and 1D, the bottom of the dielectric separationwall 50 is below the isolation insulating layer 30. In FIG. 1E, the lineL1 corresponds to the upper surface of the isolation insulating layer30. The separation wall 50 includes a separation portions 50H and adummy portion 50L to avoid collapse as shown in FIG. 1E. The gatestructure 90 extends over the dummy portion 50L of the dielectricseparation wall 50, and the gate connection is made only at the top ofmetal gate. In this embodiment, there are “valley” portions having asmaller height than the dummy portion between the separation portion 50Hand dummy portion 50L.

In FIG. 1E, the height H5 of the separation portion 50H measured fromthe top of fin F2 is in a range from about 80 nm to about 120 nm in someembodiments. The height H6 of the dummy portion 50L measured from thetop of fin F2 is in a range from about 60 nm to about 100 nm in someembodiments. The bottom portion of the dielectric separation wall 50embedded in the isolation insulating layer 30 (H7) is in a range fromabout 5 nm to about 30 nm in some embodiments.

The materials of the dielectric separation wall 50 can be SiCN, SiOCNand metal oxide, such as HfO₂, ZrO₂ and Al₂O₃, or any suitabledielectric material. In some embodiments, SiCN is used as the dielectricseparation wall 50.

FIG. 1F is another embodiment of the present disclosure. In thisembodiment, there is no “valley” portion between the separation portion50H and dummy portion 50L.

FIGS. 2A-22C show various stages of a sequential semiconductor devicemanufacturing process according to some embodiments of the presentdisclosure. In FIGS. 2A-22C, the “A” figures (e.g., FIGS. 1A, 2A, etc.)illustrate a perspective view, the “B” figures (e.g., FIGS. 1B, 2B,etc.) illustrate a cross-sectional view along the X directioncorresponding to line X1-X1 of FIG. 1B, and the “C” figures (e.g., FIG.21C, etc.) illustrate a plan view. It is understood that additionaloperations can be provided before, during, and after processes shown byFIGS. 2A-22C, and some of the operations described below can be replacedor eliminated, for additional embodiments of the method. The order ofthe operations/processes may be interchangeable.

In FIGS. 2A and 2B, fin structures 20 are formed over a substrate 10. Tofabricate a fin structures, a mask layer is formed over the substrate(e.g., a semiconductor wafer) by, for example, a thermal oxidationprocess and/or a chemical vapor deposition (CVD) process. The substrateis, for example, a p-type silicon substrate with an impurityconcentration being in a range from about 1×10¹⁵ cm⁻³ and about 5×10¹⁵cm⁻³. In other embodiments, The substrate is an n-type silicon substratewith an impurity concentration being in a range from about 1×10¹⁵ cm⁻³and about 5×10¹⁵ cm⁻³.

Alternatively, the substrate 10 may comprise another elementarysemiconductor, such as germanium; a compound semiconductor includingGroup IV-IV compound semiconductors such as SiC and SiGe, Group III-Vcompound semiconductors such as GaAs, GaP, GaN, InP, InAs, InSb, GaAsP,AlGaN, AnnAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinationsthereof. In one embodiment, the substrate 10 is a silicon layer of anSOI (silicon-on insulator) substrate. Amorphous substrates, such asamorphous Si or amorphous SiC, or insulating material, such as siliconoxide may also be used as the substrate 10. The substrate 10 may includevarious regions that have been suitably doped with impurities (e.g.,p-type or n-type conductivity).

The mask layer includes, for example, a pad oxide 24 (e.g., siliconoxide) layer and a silicon nitride mask layer 25 in some embodiments.The pad oxide layer 24 may be formed by using thermal oxidation or a CVDprocess. The silicon nitride mask layer 25 may be formed by a physicalvapor deposition (PVD), such as sputtering method, a CVD,plasma-enhanced chemical vapor deposition (PECVD), an atmosphericpressure chemical vapor deposition (APCVD), a low-pressure CVD (LPCVD),a high density plasma CVD (HDPCVD), an atomic layer deposition (ALD),and/or other processes.

The thickness of the pad oxide layer 24 is in a range from about 2 nm toabout 15 nm and the thickness of the silicon nitride mask layer 25 is ina range from about 2 nm to about 50 nm in some embodiments. A maskpattern is further formed over the mask layer. The mask pattern is, forexample, a photo resist pattern formed by photo lithography.

By using the mask pattern as an etching mask, a hard mask pattern of thepad oxide layer 24 and the silicon nitride mask layer 25 is formed.

By using the hard mask pattern as an etching mask, the substrate 10 ispatterned into fin structures 20 by trench etching using a dry etchingmethod and/or a wet etching method.

The fin structures 20 disposed over the substrate 10 are made of thesame material as the substrate 10 and continuously extend from thesubstrate 10 in one embodiment. The fin structures 20 may be intrinsic,or appropriately doped with an n-type impurity or a p-type impurity.

In the figures, four fin structures 20 are disposed. These finstructures are used for a p-type Fin FET and/or an n-type Fin FET. Thenumber of the fin structures is not limited to four. The numbers may beas small as one, or more than four. In addition, one of more dummy finstructures may be disposed adjacent both sides of the fin structures 20to improve pattern fidelity in patterning processes. The width of thefin structures 20 is in a range from about 5 nm to about 30 nm in someembodiments, and is in a range from about 7 nm to about 20 nm in certainembodiments. The height H11 of the fin structures 20 is in a range fromabout 100 nm to about 300 nm in some embodiments, and is a range ofabout 50 nm to 100nm in other embodiments. When the heights of the finstructures are not uniform, the height from the substrate may bemeasured from the plane that corresponds to the average heights of thefin structures. The height H12 of the mask pattern after the fin etchingis about 4 nm to about 50 nm in some embodiments.

In FIGS. 3A and 3B, an insulating isolation layer 30 (STI) is formed. Aninsulating material layer to form an isolation insulating layer 30 isformed over the substrate 10 so as to fully cover the fin structures 20.

The insulating material for the isolation insulating layer 30 is madeof, for example, silicon dioxide formed by LPCVD (low pressure chemicalvapor deposition), plasma-CVD or flowable CVD. In the flowable CVD,flowable dielectric materials instead of silicon oxide are deposited.Flowable dielectric materials, as their name suggest, can “flow” duringdeposition to fill gaps or spaces with a high aspect ratio. Usually,various chemistries are added to silicon-containing precursors to allowthe deposited film to flow. In some embodiments, nitrogen hydride bondsare added. Examples of flowable dielectric precursors, particularlyflowable silicon oxide precursors, include a silicate, a siloxane, amethyl silsesquioxane (MSQ), a hydrogen silsesquioxane (HSQ), anMSQ/HSQ, a perhydrosilazane (TCPS), a perhydro-polysilazane (PSZ), atetraethyl orthosilicate (TEOS), or a silyl-amine, such as trisilylamine(TSA). These flowable silicon oxide materials are formed in amultiple-operation process. After the flowable film is deposited, it iscured and then annealed to remove un-desired element(s) to form siliconoxide. When the un-desired element(s) is removed, the flowable filmdensifies and shrinks. In some embodiments, multiple anneal processesare conducted. The flowable film is cured and annealed more than once.The isolation insulating layer 30 may be SOG, SiO, SiON, SiOCN orfluorine-doped silicate glass (FSG). The isolation insulating layer 30may be doped with boron and/or phosphorous.

Further, a planarization operation, such as a chemical mechanicalpolishing (CMP) method, is performed, thereby exposing the mask layer25, as shown in FIGS. 3A and 3B.

In FIGS. 4A and 4B, a first mask layer 40 is formed on the isolationinsulating layer 30 and a second mask layer 42 is formed on the firstmask layer 40. The first mask layer 40 includes one or more layers ofSiN and SiON. The second mask layer 42 is made of amorphous or polymaterial of Group IV material, such as amorphous or poly silicon,silicon germanium or germanium. In some embodiments, the first masklayer 40 is SiN with a thickness of about 5 nm to about 30 nm, and thesecond mask layer 42 is made of amorphous Si with a thickness of about 5nm to about 30 nm. The first and second mask layers can be formed byCVD, PVD or ALD, or any suitable film forming method.

In FIGS. 5A and 5B, a photo resist layer 45 is formed over the secondmask layer 42, and by using lithography and etching operations, a partof the first and second mask layer over the second fin F2 is removed.

In FIGS. 6A and 6B, the mask layers 24 and 25 formed on the second finF2 are removed by using a suitable etching operation through the opening46. By this etching, the top surface the second fin F2 is exposed.

In FIGS. 7A and 7B, the second fin F2 is recessed by suitable dryetching. As etched, the upper portion of the fin F2 has a U-shaperesidue 29, as shown in FIG. 7B.

In FIGS. 8A and 8B, the etching residue 29 is removed by suitable wetetching. At this stage of the manufacturing operation, the etched depthH13 of the fin F2 is in a range from about 100 nm to about 300 nm insome embodiments.

In FIGS. 9A and 9B, a dielectric material for the dielectric separationwall 50 is formed. A blanket layer of the dielectric material is formedby CVD or ALD, and then a CMP or an etch back operation is performed.The dielectric separation wall 50 includes one or more layers of SiN,SiCN, SiOCN and metal oxide, such as HfO₂, ZrO₂ and Al₂O₃, or anysuitable dielectric material.

In some embodiments, before forming the dielectric material for thedielectric separation wall 50, a first cover layer 51 is formed. Thefirst cover layer is made of, for example, silicon oxide or othersuitable dielectric material, and can be formed by CVD or ALD. Thethickness of the first cover layer 51 is in a range from about 0.5 nm toabout 2 nm in some embodiments.

In FIGS. 10A and 10B, a third mask layer 52 is formed over the isolationinsulating layer 30 and a resist pattern 54 having an opening 56 isformed. The third mask layer 52 is made of amorphous or poly material ofa Group IV material, such as amorphous or poly silicon, silicongermanium or germanium. In some embodiments, the third mask layer 52 ismade of amorphous Si with a thickness of about 5 nm to about 30 nm. Thesize of the opening 56 is substantially the same as a pitch of gates,and is located at a position where a gate is subsequently divided.

In FIGS. 11A and 11B, the third mask layer 52 is etched by using thephoto resist pattern 54 as an etching mask, thereby forming an opening58 in the third mask layer 52 with one gate pitch width. The width S11of the opening 58 in the Y direction is in a range from about 20 nm toabout 50 nm in some embodiments. Then, the photo resist pattern 54 isremoved.

In FIGS. 12A-12C, a part of the dielectric separation wall 50 isrecessed by using the patterned third mask layer 52 as an etching mask.Then, the third mask layer 52 is removed. By this recess etching, thedielectric separation wall 50 has a low portion 50L, which is recessed,and high portions 50H, which are not recessed, as shown in FIG. 12C. Theamount of etching H14 is in a range from about 20 nm to about 100 nm insome embodiments.

In FIGS. 13A and 13B, the pad oxide layer 24 and the SiN layer 25 areremoved. By this operation, the isolation insulating layer 30 is alsopartially etched, and the dielectric separation wall 50 is partiallyexposed. At this stage of the manufacturing process, the protrudingheight H15 of the separation wall 50 (50H) from the upper surface of theisolation insulating layer 30 is in a range from about 5 nm to about 20nm in some embodiments. The difference in height between the separationwall 50H and the fins F1 or F3 is in a range from about 10 nm to about40 nm in some embodiments. The difference H17 in height between the finF2 and fins F1 or F3 is in a range from about 100 nm to about 300 nm insome embodiments. The height H18 of the high portions 50H is in a rangefrom about 150 nm to about 400 nm and the height H19 of the low portion50L is in a range from about 100 nm to about 300 nm in some embodiments.

In FIGS. 15A and 15B, the isolation insulating layer 30 is furtherrecessed so that upper portions of the first, third and fourth fins F1,F3 and F4 and the dielectric separation wall 50 are exposed. Here, therecessed second fin F2 is not exposed and still embedded in theisolation insulating layer 30. The first, third and fourth fins F1, F3and F4 are exposed in an amount H2O of about 50 nm to about 200 nm insome embodiments.

In FIGS. 16A and 16B, a dummy gate dielectric layer 65 is formed on theexposed fins and dielectric separation wall 50. The dummy gatedielectric layer 65 is made of, for example, silicon oxide, with athickness of 0.5 nm to 2 nm in some embodiments, and may be formed byCVD and/or ALD. The dummy gate dielectric layer 65 is also formed on theupper surface of the isolation insulating layer 30.

In FIGS. 17A and 17B, a dummy gate electrode layer is formed and thedummy gate electrode layer is patterned by using a hard mask includinglayers 72 and 74, thereby forming dummy gate electrodes 70. At least onedummy gate electrode 70 is disposed over the first and third fins andthe low portion 50L of the dielectric separation wall 50, and at leastone dummy gate electrode 70 is disposed over the first and third finsand the high portion 50H of the dielectric separation wall 50. In someembodiments, the mask layer 72 is made of a silicon nitride basedmaterial, such as SiN, and the mask layer 74 is made of a silicon oxidebased material, such as SiO₂.

In FIGS. 18A and 18B, sidewall spacers 76 are formed on opposing sidesof the dummy gate electrodes 70. A blanket layer of silicon nitridebased material (e.g., SiN, SiON or SiCN) is formed and then anisotropicetching is performed. By this etching, the dummy gate dielectric layer65 formed on the exposed fins is removed. Further, exposed dielectricseparation wall 50 is recessed in some embodiments. In such a case, thestructure as shown in FIG. 1E can be obtained. In other embodiments, thedielectric separation wall 50 is not recessed. In such a case, thestructure as shown in FIG. 1F can be obtained.

In FIGS. 19A and 19B, a source/drain (S/D) epitaxial layer 80 is formedon the exposed fins. The epitaxial S/D layer 80 is epitaxially formed onthe exposed fins and includes one or more crystalline layers of SiP,SiC, SiCP, SiB, SiGe and Ge. In some embodiments, a silicide layer isfurther formed over the epitaxial S/D layer 80.

Subsequently, an etch-stop layer (ESL) 82 is formed and an interlayerdielectric (ILD) layer 84 is formed in spaces between the dummy gateelectrodes 70 with sidewall spacers 76 and over the S/D regions. The ILDlayer 84 may include silicon oxide, silicon nitride, silicon oxynitride(SiON), SiOCN, fluorine-doped silicate glass (FSG), or a low-kdielectric material, and may be made of CVD or other suitable process.The insulating material for the dielectric separation wall 50 isdifferent from that for the isolation insulating layer 30 and the ILDlayer 84.

Planarization operations, such as an etch-back process and/or a chemicalmechanical polishing (CMP) process, are performed, so that upperportions of the dummy gate electrodes 70 and the dielectric separationwall 50 are exposed. Then, the dummy gate electrode 70 and the dummygate dielectric layer 65 are removed, thereby forming gate spaces 89, asshown in FIGS. 20A and 20B.

In FIGS. 21A-21C, metal gate structures 90 including a gate dielectriclayer 92 and a metal gate electrode layer 96 are formed in the gatespaces 89. In certain embodiments, the gate dielectric layer 92 includesone or more layers of dielectric material, such as silicon oxide,silicon nitride, or high-k dielectric material, other suitabledielectric material, and/or combinations thereof. Examples of high-kdielectric material include HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO,zirconium oxide, aluminum oxide, titanium oxide, hafnium dioxide-alumina(HfO₂-Al₂O₃) alloy, other suitable high-k dielectric materials, and/orcombinations thereof.

The metal gate electrode layer 96 includes any suitable material, suchas aluminum, copper, titanium, tantalum, tungsten, cobalt, molybdenum,tantalum nitride, nickel silicide, cobalt silicide, TiN, WN, TiAl,TiAlN, TaCN, TaC, TaSiN, metal alloys, other suitable materials, and/orcombinations thereof.

In certain embodiments, one or more work function adjustment layers 94are also disposed between the gate dielectric layer 92 and the metalgate electrode layer 96. The work function adjustment layers are made ofa conductive material such as a single layer of TiN, TaN, TaAlC, TiC,TaC, Co, Al, TiAl, Hifi, TiSi, TaSi or TiAlC, or a multilayer of two ormore of these materials. For the n-channel FET, one or more of TaN,TaAlC, TiN, TiC, Co, TiAl, Hifi, TiSi and TaSi is used as the workfunction adjustment layer, and for the p-channel FET, one or more ofTiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC and Co is used as the workfunction adjustment layer. The work function adjustment layer may beformed by ALD, PVD, CVD, e-beam evaporation, or other suitable process.Further, the work function adjustment layer may be formed separately forthe n-channel Fin FET and the p-channel Fin FET which may use differentmetal layers.

In forming the metal gate structures, the gate dielectric layer, thework function adjustment layer and the gate electrode layer are formedby suitable film forming method, for example, CVD or ALD for gatedielectric layer, and CVD, PVD, ALD or electroplating for the metallayers, and then a planarization operation such as CMP is performed toremove excess material formed over the ILD layer 84.

In FIGS, 22A-22C, the ILD layer 84 and the metal gate structures 90 arefurther recessed by a planarization operation such as CMP, therebyexposing the high portions 50H of the separation wall 50.

In other embodiments, during the operations of FIGS. 20A and 20B, thedielectric separation wall 50 is exposed to divide the dummy gatestructure into two sub-dummy gate structures, and during the operationsof FIGS. 21A-22C, the two sub-dummy gate structures are replaced with ametal gate structure, respectively.

As set forth above, the separation wall 50 is formed before the dummygate structure and the metal gate structure are formed. Accordingly, itis possible to minimize the width of the separation wall 50 and toenlarge the end size of the metal gate electrode and the fin structure.

It is understood that the structure undergoes further CMOS processes toform various features such as interconnect vias, interconnect metallayers, passivation layers, etc.

FIGS. 23A-23D show various views of a semiconductor fin field effecttransistor (FinFET) according to other embodiments of the presentdisclosure. Materials, configurations, processes and/or structures sameas or similar to those of FIGS. 1A-22C may be applied to the followingembodiments, and detailed explanation may be omitted.

In the following embodiments, a distance between a dielectric separationwall 150 and a fin 120 is substantially varies. The distance may bedefined by dummy layers' thicknesses. The dielectric separation wall 150is located on the isolation insulating layer 130. The gate dielectriclayer 192 (interfacial silicon oxide and high-k dielectric material) isdeposited on the fin 120 and the dielectric separation wall 150.

As shown in FIGS. 23A-23D, a semiconductor device includes a substrate110, semiconductor fins 120 and gate structures 190. The bottom of thesemiconductor fins 120 are embedded in an isolation insulating layer130, which is also called shallow trench isolation (STI). In FIGS.23A-23D, four fins F11, F12, F13 and F14 are disposed over the substrate110, but the number of the fins is not limited to four. Some of the gatestructures 190 are physically separated by separation walls 150A or 150Bmade of a dielectric material. On opposing sides of the gate structure190, sidewall spacers 176 are disposed. The gate structures 190 includea gate dielectric layer 192, a work function adjustment layer 194 and abody gate electrode 196.

The fins 120 not covered by the gate structures 190 are source/drain(S/D) regions. An epitaxial layer 180 is formed on the S/D regions ofthe fins 120 and an etch stop layer (ESL) 182 is formed over theepitaxial layer 180. Further, an interlayer dielectric (ILD) layer 184is formed to cover the S/D structures.

In 23A-23D, the fin structures 120 includes first F11, second F12, thirdF13 and fourth F14 fin structures disposed in this order, in someembodiments. A pitch P31 between the first fin F11 and second fin F12 is2FP, a pitch P32 of the second fin F12 and the third fin F13 is 3FP anda pitch P33 between the third fin F13 and the fourth fin F14 is 4FP ormore. In some embodiments, where FP is a base fin pitch (minimum finpitch defined by a design rule) FP, which is about 14 nm to 30 nm insome embodiments.

As shown in FIGS. 23C and 23D, the distance H32 between the ESL 182 onthe S/D region and the upper surface of the ILD layer 184 is in a rangefrom about 14 nm to about 30 nm in some embodiments. The distance H31between the top of the fin F11 and the upper surface of the body gateelectrode 96 is in a range from about 18 nm to about 40 nm in someembodiments.

In 23A-23D, a distance S31 between the dielectric separation wall 150Aand the adjacent fin F11 or F12 is in a range from about 8 nm to about20 nm, and a distance S32 between the dielectric separation wall 150Band the adjacent fin F13 or F14 is in a range from about 20 nm to about40 nm, in some embodiments.

The width W31 of the dielectric separation wall 150A is about 4 nm toabout 8 nm in some embodiments. The width W32 of the dielectricseparation wall 150B is about 8 nm to about 40 nm in some embodiments.

As shown in FIGS. 23C and 2D, the bottom of the dielectric separationwall 150 is on the upper surface of the isolation insulating layer 130.

The materials of the dielectric separation wall can be SiCN, SiOCN andmetal oxide, such as HfO₂, ZrO₂ and Al₂O₃, or any suitable dielectricmaterial.

FIGS. 24A-45B show various stages of a sequential semiconductor devicemanufacturing process according to other embodiments of the presentdisclosure. In FIGS. 24A-45B, the “A” figures illustrate a perspectiveview, the “B” figures illustrate a cross-sectional view along the Xdirection corresponding to line X12-X12 of FIG. 23B, and the “C” figuresillustrate a plan view. It is understood that additional operations canbe provided before, during, and after processes shown by FIGS. 24A-45B,and some of the operations described below can be replaced oreliminated, for additional embodiments of the method. The order of theoperations/processes may be interchangeable. Structures, configurations,materials and/or processes similar to or same as the foregoingembodiments may be employed in the following embodiments, and thedetailed explanations may be omitted.

In FIGS. 24A and 24B, the fin structures 120 are formed over a substrate110. The fins F11-F14 include a first cap layer 122 and a second caplayer 124. The first cap layer 122 is made of metal oxide such astitanium oxide, hafnium oxide and zirconium oxide. The thickness of thefirst cap layer 122 is about 5 nm to about 20nm in some embodiments. Thesecond cap layer 124 is made of amorphous or poly material of Group IVmaterial, such as amorphous or poly silicon, silicon germanium orgermanium. In some embodiments, the second cap layer 124 is made ofamorphous Si with a thickness of about 20 nm to about 50 nm.

Further, an insulating isolation layer (STI) 130 is formed. Aninsulating material layer for the isolation insulating layer 130 isformed over the substrate 110 so as to fully cover the fin structures120. A planarization operation, such as a chemical mechanical polishing(CMP) method, is performed, thereby exposing the second cap layer 124.

In FIGS. 25A and 25B, the isolation insulating layer 130 is recessed,and an oxide layer 135 is formed. The oxide layer 135 may be formed byALD and/or CVD and has a thickness about 1 nm to about 5 nm in someembodiments. After the isolation insulating layer 130 is recessed thedistance between the upper surface of the isolation insulating layer 130and the top of the second cap layer 124 is in a range from about 100 nmto about 400 nm in some embodiments.

In FIGS. 26A and 26B, a sacrificial layer 140 is formed over therecessed isolation insulating layer 130 such that the second cap layer124 covered with the oxide layer 135 protrudes from the isolationinsulating layer 130. In some embodiments, the sacrificial layer 140 ismade of an organic material, such as bottom anti reflective coating(BARC) or photo resist. A thick layer is first formed, and then anetch-back operation is performed to adjust the thickness of thesacrificial layer 140.

In FIGS. 27A and 27B, the oxide layer 135 formed on the second cap layer124 is removed by wet and/or dry etching, and then the sacrificial layer140 is removed.

In FIGS. 28A and 28B, a first dummy layer 142 is formed over the fins.The first dummy layer 142 is made of amorphous or poly material of aGroup IV material, such as amorphous or poly silicon, silicon germaniumor germanium. In some embodiments, the first dummy layer 142 is made ofamorphous Si with a thickness of about 5 nm to about 20 nm. Here, spacesare formed between the first dummy layers formed on the adjacent finstructures. A blanket layer of amorphous Si is formed and thenanisotropic etching is performed. The space S41 between the first dummylayers formed on the first fin F11 and the second fin F12 is in a rangefrom about 4 nm to about 14 nm in some embodiments. The height H42between the upper surface of the isolation insulating layer 130 and thetop of the first dummy layer 142 is in a range from about 120 nm toabout 500 nm in some embodiments. In some embodiments, since the secondcap layer 124 and the first dummy layer 142 are made of the samematerial, e.g., amorphous Si, there is no observable boundary betweenthe second cap layer 124 and the first dummy layer 142.

In FIGS. 29A and 29B, a second dummy layer 143 is conformally formed, byusing ALD or CVD. The second dummy layer 143 is made of silicon nitridebased material, such as SiN and SiON. In some embodiments, the seconddummy layer 143 is made of SiN with a thickness of about 5 nm to about20 nm. The second dummy layer 143 fully fills the space between thefirst and second fins, while spaces are formed between the second andthird fins and between the third and fourth fins.

In FIGS. 30A and 30B, anisotropic etching is performed to removeunnecessary portion of the second dummy layer 143, while the seconddummy layer 143 in the space between the first and second fins remains.

In FIGS. 31A and 31B, a third dummy layer 144 is formed. The third dummylayer 144 is made of amorphous or poly material of a Group IV material,such as amorphous or poly silicon, silicon germanium or germanium. Insome embodiments, the third dummy layer 144 is made of amorphous Si witha thickness of about 5 nm to about 20 nm. Here, spaces are formedbetween the third dummy layers formed on the adjacent fins.

In FIGS. 32A and 32B, anisotropic etching is performed. The space S42between the third dummy layers formed on the second fin F12 and thethird fin F13 is in a range from about 4 nm to about 14 nm in someembodiments. The space S43 between the third dummy layers formed on thethird fin F13 and the fourth fin F14 is in a range from about 8 nm toabout 40 nm in some embodiments.

In FIGS. 33A and 33B, the second dummy layer 143 is removed by wetand/or dry etching. The space S44 between the third dummy layers formedon the second fin F12 and the third fin F13 is in a range from about 4nm to about 14 nm in some embodiments. The space S45 between the thirddummy layers formed on the third fin F13 and the fourth fin F14 is in arange from about 8 nm to about 40 nm in some embodiments.

In FIGS. 34A and 34B, a dielectric material for the dielectricseparation wall 150 is formed. A blanket layer of the dielectricmaterial is formed and then CMP or etch back operations are performed.The dielectric separation wall 150 includes one or more layers of SiSiCN, SiOCN, metal oxide, such as HfO₂, ZrO₂ and Al₂O₃, or any othersuitable dielectric material. The dielectric material for the dielectricseparation wall 150 may be formed by chemical vapor deposition (CVD),atomic layer deposition (ALD) or any other suitable film formationmethods.

In FIGS. 35A and 35B, a mask layer 152 is formed on the dielectricmaterial for the dielectric separation wall 150 and the first and seconddummy layers 142 and 143. The mask layer 152 includes one or more layersof silicon oxide based material, such as SiO₂ and SiON. In someembodiments, the mask layer 152 is SiO₂ with a thickness of about 5 nmto about 30 nm.

In FIGS. 36A-36C, by using a photo resist pattern 154, the mask layer152 is patterned. One of the photo resist patterns is located over aregion where two sets of gate electrodes are separately formed, and oneof the photo resist patterns is located over a region where another setof gate electrodes are separately formed. See, FIG. 23B.

In FIGS. 37A and 37B, by using the patterned mask layer 152 as anetching mask, the dielectric material for the dielectric separation wall150 is patterned, thereby forming a first dielectric separation wall150A and a second dielectric separation wall 150B. The first dielectricseparation wall 150A has a different width than the second dielectricseparation wall 150B. In some embodiments, the width of first dielectricseparation wall 150A is twice or more the width of the second dielectricseparation wall 150B.

In FIGS. 38A and 38B, a fourth dummy layer 170 is formed. The fourthdummy layer 170 is made of amorphous or poly material of a Group IVmaterial, such as, amorphous or poly silicon, silicon germanium orgermanium. In some embodiments, the fourth dummy layer 170 is made ofpoly Si. In certain embodiments, since the second cap layer 124, thefirst dummy layer 142, the third dummy layer 144 and the fourth dummylayer 170 are made of the same material, e.g., amorphous Si, they aretreated as one dummy gate electrode layer.

In FIGS. 39A-39D, the dummy gate electrode layer (layers 124, 142, 144and 170) is patterned by using a hard mask including layers 172 and 174,thereby forming dummy gate electrodes 175. At least one dummy gateelectrode 175 is disposed over the first and second fins and the firstdielectric separation wall 150A, and at least one dummy gate electrode175 is disposed over the third and fourth fins and the second dielectricseparation wall 150B. In some embodiments, as shown in FIG. 39C, twodummy gate electrodes 175 are disposed over the first to fourth fins andthe first dielectric separation wall 150A, and one dummy gate electrode175 is disposed over the first to fourth fins and the second dielectricseparation wall 150B. The width W41 of the dummy gate electrode 175 isin a range from about 4 nm to about 20 nm in some embodiments.

In FIGS. 40A and 40B, sidewall spacers 176 are formed on opposing sidesof the dummy gate electrodes 175. A blanket layer of silicon nitridebased material (SiN, SiON, SiCN) is formed and then anisotropic etchingis performed. By this etching, the silicon nitride based material formedon the exposed fins is removed. In some embodiments, the dielectricseparation walls 150 not covered by the dummy gate electrode and thesidewall spacers are recessed. In other embodiments, the dielectricseparation walls 150 are not recessed.

In FIGS. 41A and 41B, a source/drain (S/D) epitaxial layer 180 is formedon the exposed fins. The epitaxial S/D layer 180 includes one or morecrystalline layers of SiP, SiC, SiCP, SiB, SiGe and Ge. In someembodiments, a silicide layer is further formed over the epitaxial S/Dlayer 180.

In FIGS. 42A and 42B, an etch-stop layer (ESL) 182 is formed and aninterlayer dielectric (ILD) layer 184 is formed in spaces between thedummy gate electrodes 175 with sidewall spacers 176. The ILD layer 184may include silicon oxide, silicon nitride, silicon oxynitride (SiON),SiOCN, fluorine-doped silicate glass (FSG), or a low-K dielectricmaterial, and may be made of CVD or other suitable process. Theinsulating material for the dielectric separation wall 150 is differentfrom the isolation insulating layer 130 and the ILD layer 184.

Planarization operations, such as an etch-back process and/or a chemicalmechanical polishing (CMP) process, are performed, so that upperportions of the dummy gate electrodes 175 and the first and seconddielectric separation walls 150A and 150B are exposed.

In FIGS. 43A and 43B, the dummy gate electrode 175, first and second caplayers 122, 124 and the oxide layer 135 are removed, thereby forminggate spaces 189.

In FIGS. 44A-44C, metal gate structures 190 including a gate dielectriclayer 192, a work function adjustment layer 194 and a metal gateelectrode layer 96 are formed in the gate space 189. In forming themetal gate structures, the gate dielectric layer, the work functionadjustment layer and the gate electrode layer are formed by a suitablefilm forming method, for example, CVD or ALD for gate dielectric layer,and CVD, PVD, ALD or electroplating for the metal layers, and then aplanarization operation such as CMP is performed to remove excessmaterial formed over the ILD layer 184.

In FIGS. 45A and 45B, a planarization operation, such as CMP, isperformed to expose the dielectric separation walls 150A and 150B.

In some embodiments, one gate electrode 190 and at least one of thesidewall spaces 176 are separated by the first dielectric separationwall 150A from another second gate electrode 190 and at least one of thesidewall spacers 176. Further, in some embodiments, the sidewall spacers176 are continuously formed on sidewalls of the first dielectricseparation wall 150A, and other sidewall spacers 176 are continuouslyformed on other sidewalls of the first dielectric separation wall 150A.

In other embodiments, during the operations of FIGS. 42A and 42B, thedielectric separation wall 150 is exposed to divide the dummy gatestructure into two sub-dummy gate structures, and during the operationsof FIGS. 43A-45B, the two sub-dummy gate structures are replaced with ametal gate structure, respectively.

As set forth above, the separation wall 150 is formed before the dummygate structure and the metal gate structure are formed. Accordingly, itis possible to more precisely control the width of the separation wall150 and to enlarge the end size of the metal gate electrode and the finstructure.

It is understood that the structure undergoes further CMOS processes toform various features such as interconnect vias, interconnect metallayers, passivation layers, etc.

The various embodiments or examples described herein offer severaladvantages over the existing art. By using the dielectric separationwall as described above, it is possible to secure an appropriate amount(dimension) of an end cap (a space between the dielectric separationwall and the closest fin), and to reduce a fin-to-fin space.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

According to one aspect of the present disclosure, in a method ofmanufacturing a semiconductor device, a separation wall made of adielectric material is formed between two fin structures. A dummy gatestructure is formed over the separation wall and the two fin structures.An interlayer dielectric (ILD) layer is formed over the dummy gatestructure. An upper portion of the ILD layer is removed, therebyexposing the dummy gate structure. The dummy gate structure is replacedwith a metal gate structure. A planarization operation is performed toexpose the separation wall, thereby dividing the metal gate structureinto a first gate structure and a second gate structure. The first gatestructure and the second gate structure are separated by the separationwall.

An upper portion of the ILD layer is removed, thereby exposing theseparation wall and dividing the dummy gate structure into a first dummygate structure and a second dummy gate structure. The first dummy gatestructure and the second dummy gate structure are replaced with a firstgate structure and a second gate structure, respectively. The first gatestructure and the second gate structure are separated by the separationwall.

According to another aspect of the present disclosure, in a method ofmanufacturing a semiconductor device, first, second and third finstructures are formed. The second fin structure is located between thefirst and second fin structures, and each of the first to third finstructures is made of semiconductor material and having an insulatingcap layer. An isolation insulating layer is formed such that the firstto third fin structures are embedded in the isolation insulating layerand the insulating cap layer is exposed. A first mask pattern is formedover the isolation insulating layer. The first mask pattern has a firstopening over the second fin structure. The second fin structure isrecessed by etching using the first mask pattern as an etching mask. Adielectric separation wall is formed on the recessed second finstructure. The isolation insulating layer is formed so that upperportions of the first and third fin structures and an upper portion ofthe dielectric separation wall are exposed. A first dummy gate structureis formed over the exposed first and third fin structures and theexposed dielectric separation wall. An interlayer dielectric (ILD) layeris formed over the first dummy gate structure. An upper portion of theILD layer is removed, thereby exposing the first dummy gate structure.The first gate structure is replaced with a metal gate structure. Aplanarization operation is performed, thereby dividing the metal gatestructure into a first gate structure and a second gate structure. Thefirst gate structure and the second gate structure are separated by thedielectric separation wall.

According to another aspect of the present disclosure, a semiconductordevice includes a first gate electrode disposed over an isolationinsulating layer formed on a substrate, a second gate electrode disposedover the isolation insulating layer, the first and second gateelectrodes extending in and being aligned along a first direction, and adielectric separation wall protruding from the isolation insulatinglayer and disposed between and separating the first gate electrode andthe second gate electrode. The dielectric separation wall is made of adifferent dielectric material than the isolation insulating layer.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a first gateelectrode disposed over an isolation insulating layer formed on asubstrate; first sidewall spacers disposed on opposing sides of thefirst gate electrode; a second gate electrode disposed over theisolation insulating layer, the first and second gate electrodeextending in and being aligned along a first direction; second sidewallspacers disposed on opposing sides of the second gate electrode; a firstdielectric separation wall disposed on isolation insulating layer anddisposed between and separating the first gate electrode and the secondgate electrode; and a third sidewall spacer disposed on sides of thefirst dielectric separation wall, wherein: the first dielectricseparation wall is made of a different dielectric material than theisolation insulating layer, the first gate electrode are separated bythe first dielectric separation wall from the second gate electrode, andone of the first sidewall spacers, the third sidewall spacers and one ofthe second sidewall spacers are continuous.
 2. The semiconductor deviceof claim 1, further comprising: a fourth sidewall spacers formed on aside of the first dielectric separation wall; and a fifth sidewallspacers formed on another side of the first dielectric separation wall,wherein another of the first sidewall spacers and the fourth sidewallspacers are continuous, and another of the second sidewall spacers andthe fifth sidewall spacers are continuous.
 3. The semiconductor deviceof claim 1, further comprising: a first fin structure protruding fromthe isolation insulating layer; and a second fin structure protrudingfrom the isolation insulating layer, wherein: the first gate electrodeis disposed over the first fin structure, the second gate electrode isdisposed over the second fin structure, and a center-to-center distancebetween the first dielectric separation wall and the first fin structureis substantially equal to a center-to-center distance between the firstdielectric separation wall and the second fin structure.
 4. Thesemiconductor device of claim 1, further comprising: a third gateelectrode disposed over the isolation insulating layer; fourth sidewallspacers disposed on opposing sides of the third gate electrode; a fourthgate electrode disposed over the isolation insulating layer, the thirdand fourth gate electrode extending in and being aligned along the firstdirection; fifth sidewall spacers disposed on opposing sides of thefourth gate electrode; and a second dielectric separation wall disposedon isolation insulating layer and disposed between and separating thethird gate electrode and the fourth gate electrode, wherein: the seconddielectric separation wall is made of a same material as the firstdielectric separation wall, and a width of the first dielectricseparation wall in the first direction is different from a width of thesecond dielectric separation wall in the first direction.
 5. Thesemiconductor device of claim 4, wherein the width of the firstdielectric separation wall in the first direction is twice or more thewidth of the second dielectric separation wall in the first direction.6. The semiconductor device of claim 4, further comprising a sixthsidewall spacers formed on sides of the second dielectric separationwall
 7. The semiconductor device of claim 6, wherein one of the fourthsidewall spaces, the sixth sidewall spacers and one of the fifthsidewall spacers are continuous.
 8. The semiconductor device of claim 1,wherein the first dielectric separation wall includes one or more layersof SiCN, zirconium oxide, aluminum oxide and hafnium oxide.
 9. Thesemiconductor device of claim 1, wherein a top of the first dielectricseparation wall is located at a higher level than a top of the first andsecond fin structures.
 10. The semiconductor device of claim 1, whereinthe third sidewall spacer disposed on three sides of the firstdielectric separation wall.
 11. A method of manufacturing asemiconductor device, the method comprising: forming first and secondfin structures made of semiconductor and having a cap layer, the firstand second fin structures protruding from an isolation insulating layer;forming a first dummy layer over the first and second fin structuressuch that a space is formed between the first dummy layer formed on thefirst fin structure and the first dummy layer formed on the second finstructure; forming a dielectric separation wall in the space; forming asecond dummy layer over the first dummy layer and the dielectricseparation wall; patterning the first and second dummy layers, therebyforming a dummy gate structure; forming an interlayer dielectric layer(ILD) over the dummy gate structure; removing an upper portion of theILD layer, thereby exposing the dielectric separation wall and first andsecond fin structures, and dividing the first dummy gate structure intoa first sub-dummy gate structure and a second sub-dummy gate structure;and replacing the first sub-dummy gate structure and the secondsub-dummy gate structure with a first gate structure and a second gatestructure, respectively, wherein the first gate structure and the secondgate structure are separated by the dielectric separation wall.
 12. Themethod of claim 11, wherein the dielectric separation wall includes oneor more layers of SiCN, zirconium oxide, aluminum oxide and hafniumoxide.
 13. The method of claim 11, wherein the cap layer includes one ormore layers of titanium oxide, hafnium oxide and zirconium oxide and anamorphous silicon layer formed thereon.
 14. A method of manufacturing asemiconductor device, the method comprising: forming first, second,third and fourth fin structures, which are disposed in this order,protrude from an isolation insulating layer, are made of semiconductorand having a cap layer, respectively; forming a first dummy layer overthe first and second fin structures such that a first space is formedbetween the first dummy layer formed on the first fin structure and thefirst dummy layer formed on the second fin structure; forming a seconddummy layer is the first space; forming a third dummy layer over thefirst dummy layer and the second dummy layer so that a second space isformed between the third dummy layer formed over the third fin structureand the third dummy layer formed over the fourth fin structure; afterthe third dummy layer is formed, removing the second dummy layer,thereby re-forming the first space; forming a first dielectricseparation wall in the first space and forming a second dielectricseparation wall in the second space; forming a fourth dummy layer overthe first and third dummy layers and the first and second dielectricseparation walls; patterning the first, third and fourth dummy layers,thereby forming a first dummy gate structure over the first and secondfin structures and the first dielectric separation well, and a seconddummy gate structure over the third and fourth fin structures and thesecond dielectric separation well; forming an interlayer dielectriclayer (ILD) over the first and second dummy gate structures; removing anupper portion of the ILD layer, thereby exposing the first and seconddielectric separation walls and first to fourth fin structures, anddividing the first dummy gate structure into a first sub-dummy gatestructure and a second sub-dummy gate structure and dividing the seconddummy gate structure into a third sub-dummy gate structure and a fourthsub-dummy gate structures; and replacing the first sub-dummy gatestructure and the second sub-dummy gate structure with a first gatestructure and a second gate structure, respectively, and the thirdsub-dummy gate structure and the fourth sub-dummy gate structure with athird gate structure and a fourth gate structure, respectively, wherein:the first gate structure and the second gate structure are separated bythe first dielectric separation wall, and the third gate structure andthe fourth gate structure are separated by the second dielectricseparation wall, and the first dielectric separation wall has adifferent size than the second dielectric separation wall.
 15. Themethod of claim 14, wherein a pitch between the first and second finstructures is P1, a pitch between the second and third fin structures isP2, a pitch of the third and fourth fin structures is P4, where P1=2P,P2=3P and P3=4P and P is a base pitch.
 16. The method of claim 14,wherein the dielectric separation wall includes one or more layers ofSiCN, zirconium oxide, aluminum oxide and hafnium oxide.
 17. The methodof claim 14, wherein the cap layer includes one or more layers oftitanium oxide, hafnium oxide and zirconium oxide and an amorphoussilicon layer formed thereon.
 18. The method of claim 14, wherein thefirst, second, third and fourth fin structures are formed by: forming anisolation insulating layer such that the first to third fin structuresare embedded in the isolation insulating layer and the cap layer of eachof the first to fourth fin structures is exposed; recessing theisolation insulating layer so that upper portions of the first to fourthfin structures are exposed; and forming a cover layer over the exposedfirst to fourth fin structures and the cap layer; partially removing thecover layer from the cap layer, wherein: the cap layer includes one ormore layers of titanium oxide, hafnium oxide and zirconium oxide and anamorphous silicon layer formed thereon, and the cover layer disposed onthe amorphous layer is removed.
 19. The method of claim 14, furthercomprising, between forming the cover layer and partially removing thecover layer, forming a sacrificial layer over the recessed isolationinsulating layer so that the amorphous silicon layer is protrude fromthe sacrificial layer.
 20. The method of claim 14, wherein: the firstdummy layer and the second dummy layer are made of poly silicon oramorphous silicon, and the second dummy layer is made of silicon nitridebased material.